In this report, the behavior of a generic 130nm technology under variations of
the supply-voltage and temperature is analyzed1 in order to evaluate how accurate
a high level leakage model can separate the voltage and temperature dependence to
simple de-rating functions. The measurements are based on SPICE3f5 simulations
using the BSIM4v4.0 transistor model with generic transistor data from the default
130nm Berkeley Predictive Technology Model (BPTM).
The result is, that for the generic technology, the voltage and temperature dependence
are separable and - in addition - easily predictable from the behavior of the
basic transistors (PMOS and NMOS) of this technology.
Based on the result of the accuracy analysis, 3 possible leakage macro-models are
suggested needing a minimal amount of characterization data.
For all technologies, where BPTM files are available, comparisons with real silicon
measurements are done with the result, that the SPICE-BSIM-BPTM flow has an
average error of just 2% but missing characterization data will usually result in a
factor 1.6 overestimation and underestimating of the best suggested model for different