@techreport{Hel2005,Author = {Helms, Domenik},Title = {Accuracy of leakage models: Voltage and temperature de-rating - ForschCV Project Report},Year = {2005},Month = {01},type = {techreport},note = {In this report, the behavior of a generic 130nm technology under variations ofthe supply-voltage and temperature is analyzed1 in order to evaluate how accuratea high level leakage model can separate the voltage and temperature dependence tosimple de},Abstract = {In this report, the behavior of a generic 130nm technology under variations ofthe supply-voltage and temperature is analyzed1 in order to evaluate how accuratea high level leakage model can separate the voltage and temperature dependence tosimple de-rating functions. The measurements are based on SPICE3f5[1] simulationsusing the BSIM4v4.0[2] transistor model with generic transistor data from the default130nm Berkeley Predictive Technology Model (BPTM)[4].The result is, that for the generic technology, the voltage and temperature dependenceare separable and - in addition - easily predictable from the behavior of thebasic transistors (PMOS and NMOS) of this technology.Based on the result of the accuracy analysis, 3 possible leakage macro-models aresuggested needing a minimal amount of characterization data.For all technologies, where BPTM files are available, comparisons with real siliconmeasurements are done with the result, that the SPICE-BSIM-BPTM flow has anaverage error of just 2% but missing characterization data will usually result in afactor 1.6 overestimation and underestimating of the best suggested model for differenttechnologies.}}@COMMENT{Bibtex file generated on }