@techreport{Hel2005,
Author = {Helms, Domenik},
Title = {Accuracy of leakage models: Voltage and temperature de-rating - ForschCV Project Report},

Year = {2005},
Month = {01},
type = {techreport},
note = {In this report, the behavior of a generic 130nm technology under variations of
the supply-voltage and temperature is analyzed1 in order to evaluate how accurate
a high level leakage model can separate the voltage and temperature dependence to
simple de},
Abstract = {In this report, the behavior of a generic 130nm technology under variations of
the supply-voltage and temperature is analyzed1 in order to evaluate how accurate
a high level leakage model can separate the voltage and temperature dependence to
simple de-rating functions. The measurements are based on SPICE3f5[1] simulations
using the BSIM4v4.0[2] transistor model with generic transistor data from the default
130nm Berkeley Predictive Technology Model (BPTM)[4].
The result is, that for the generic technology, the voltage and temperature dependence
are separable and - in addition - easily predictable from the behavior of the
basic transistors (PMOS and NMOS) of this technology.
Based on the result of the accuracy analysis, 3 possible leakage macro-models are
suggested needing a minimal amount of characterization data.
For all technologies, where BPTM files are available, comparisons with real silicon
measurements are done with the result, that the SPICE-BSIM-BPTM flow has an
average error of just 2% but missing characterization data will usually result in a
factor 1.6 overestimation and underestimating of the best suggested model for different
technologies.}
}
@COMMENT{Bibtex file generated on }